Revolutionary Progress Of Future Material Silicon Carbide

The third-generation semiconductor materials mainly include wide bandgap group III nitrides represented by gallium nitride (GaN), wide bandgap group IV compounds represented by silicon carbide (SiC), and wide bandgap oxides. They have superior properties such as high breakdown electric field, high thermal conductivity, high electron saturation drift rate, and strong radiation resistance. They are the "core" of solid-state light sources, power electronics, and microwave RF devices, and are used in semiconductor lighting, next-generation mobile communication New energy grid integration, smart grids, high-speed rail transit, new energy vehicles, consumer electronics and other fields have broad application prospects and are becoming a new strategic highland for the global semiconductor industry.

To help improve the quality and efficiency of China's third-generation semiconductor industry, better integrate the advantageous resources of the domestic and foreign third-generation semiconductor industry, and achieve the rapid rise of China's semiconductor industry. With strong support from relevant departments such as the Ministry of Science and Technology, the National Development and Reform Commission, the Ministry of Industry and Information Technology, and the Beijing government, the 2017 International Third Generation Semiconductor Forum (IFWS 2017), organized by the Third Generation Semiconductor Industry Technology Innovation Strategic Alliance and the Shunyi Park Management Committee of Zhongguancun Science and Technology Park, will be held from November 1-3, 2017 at the Hilton Hotel of Beijing Capital Airport. As an important component of the forum, the "Silicon Carbide Materials and Devices Branch" will cover SiC substrate, homogeneous epitaxy, and power electronic device technology. The branch extensively solicits excellent research results and will invite well-known experts from both domestic and foreign countries to participate in this conference, fully showcasing the latest progress in silicon carbide materials and power electronic device technology. Silicon carbide (SIC) is recognized by the semiconductor industry as a "future material" and a new type of semiconductor material with broad development potential in the new century. It is expected to develop rapidly and achieve significant results in the next 5-10 years. The main factor driving the development of silicon carbide is that the load capacity of silicon (SI) materials has reached its limit, and there is no room for breakthroughs in the performance and capacity limits of semiconductor devices based on silicon as a substrate.